The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2021
Filed:
Jun. 28, 2019
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Hidehiro Fujiwara, Hsinchu, TW;
Hung-Jen Liao, Hsinchu, TW;
Hsien-Yu Pan, Hsinchu, TW;
Chih-Yu Lin, Taichung, TW;
Yen-Huei Chen, Jhudong Township, TW;
Yasutoshi Okuno, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A memory cell includes a first and second pull up transistor, a first and second pass gate transistor and a metal contact. The first pull up transistor has a first active region extending in a first direction. The first pass gate transistor has a second active region extending in the first direction, and being separated from the first active region in a second direction. The second active region is adjacent to the first active region. The second pass gate transistor is coupled to the second pull up transistor. The metal contact extends in the second direction, and extends from the first active region to the second active region. The metal contact couples drains of the first pull up transistor and the first pass gate transistor. The first and second pass gate transistors and the first and second pull up transistors are part of a four transistor memory cell.