The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 25, 2021

Filed:

Apr. 19, 2019
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventors:

Yi-Hao Chien, Taichung, TW;

Kazuaki Takesako, Taichung, TW;

Kai Jen, Taichung, TW;

Hung-Yu Wei, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 21/764 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10885 (2013.01); H01L 21/764 (2013.01); H01L 27/1087 (2013.01); H01L 27/10829 (2013.01); H01L 27/10888 (2013.01);
Abstract

A semiconductor device and a manufacturing method of the same are provided. The method includes forming a plurality of first conductive structures and a first dielectric layer between the first conductive structures on a substrate. The method also includes forming a trench between the first dielectric layer and the first conductive structures. The method further includes forming a liner material on a sidewall and a bottom of the trench. In addition, the method includes forming a conductive plug on the liner material in the trench. The method also includes removing the liner material to form an air gap, and the air gap is located between the conductive plug and the first dielectric layer.


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