The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 25, 2021

Filed:

Dec. 20, 2019
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Nai-Hao Yang, Keelung, TW;

Hung-Wen Su, Jhubei, TW;

Kuan-Chia Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 21/324 (2006.01); H01L 21/67 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76877 (2013.01); H01L 21/2855 (2013.01); H01L 21/324 (2013.01); H01L 21/67103 (2013.01); H01L 23/53238 (2013.01);
Abstract

The present disclosure provides methods for forming a conductive fill material (e.g., a conductive feature) by a physical vapor deposition (PVD) process. In one embodiment, a method of forming a conductive fill material on a substrate includes maintaining a first substrate temperature at a first range for a first period of time while forming a pre-layer of a conductive fill material on a substrate, providing a thermal energy to the substrate to maintain the substrate at a second substrate temperature at a second range for a second period of time, wherein the second substrate temperature is higher than the first substrate temperature, and continuously providing the thermal energy to the substrate to maintain the substrate a third substrate temperature at a third range for a third period of time to form a bulk layer of the conductive fill material on the substrate.


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