The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2021
Filed:
Jul. 13, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
I-Ming Chang, ShinChu, TW;
Chih-Cheng Lin, Taipei, TW;
Chi-Ying Wu, Hsinchu, TW;
Wei-Ming You, Taipei, TW;
Ziwei Fang, Hsinchu, TW;
Huang-Lin Chao, Oregon, OR (US);
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method for forming a semiconductor device structure is provided. The method includes depositing a gate dielectric layer over a substrate. The substrate has a base portion and a first fin portion over the base portion, and the gate dielectric layer is over the first fin portion. The method includes forming a gate electrode layer over the gate dielectric layer. The gate electrode layer includes fluorine. The method includes annealing the gate electrode layer and the gate dielectric layer so that fluorine from the gate electrode layer diffuses into the gate dielectric layer.