The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2021
Filed:
Jul. 08, 2019
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 21/027 (2006.01); G03F 7/40 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); G03F 7/40 (2013.01); H01L 21/0273 (2013.01); H01L 21/0277 (2013.01); H01L 21/31116 (2013.01); H01L 21/76802 (2013.01); H01L 21/76811 (2013.01); H01L 21/76813 (2013.01); H01L 21/76877 (2013.01);
Abstract
A method includes exposing and developing a negative photo resist, and performing a treatment on the negative photo resist using an electron beam. After the treatment, a layer underlying the photo resist is etched using the negative photo resist as an etching mask.
Quick Actions:
Hsieh, Wen-Kuo. (2021). Curing photo resist for improving etching selectivity (U.S. Patent No. 11018021). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11018021
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile