The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 25, 2021

Filed:

Apr. 11, 2019
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Guoqiang Jian, San Jose, CA (US);

Wei Tang, Santa Clara, CA (US);

Chi-Chou Lin, San Jose, CA (US);

Paul Ma, Santa Clara, CA (US);

Yixiong Yang, San Jose, CA (US);

Mei Chang, Saratoga, CA (US);

Wenyi Liu, Santa Clara, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 29/49 (2006.01); H01L 21/02 (2006.01); H01L 21/324 (2006.01); H01L 29/78 (2006.01); H01L 21/67 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28088 (2013.01); H01L 21/0228 (2013.01); H01L 21/02205 (2013.01); H01L 21/28506 (2013.01); H01L 21/324 (2013.01); H01L 21/67017 (2013.01); H01L 21/67248 (2013.01); H01L 29/4966 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 2029/7858 (2013.01);
Abstract

The present disclosure relates to a method for forming a p-metal work function nitride film having a desired p-work function on a substrate, including: adjusting one or more of a temperature of a substrate, a duration of one or more temporally separated vapor phase pulses, a ratio of a tungsten precursor to a titanium precursor, or a pressure of a reaction to tune a work function of a p-metal work function nitride film to a desired p-work function, and contacting the substrate with temporally separated vapor phase pulses of the tungsten precursor, the titanium precursor, and a reactive gas to form a p-metal work function nitride film thereon having the desired p-work function.


Find Patent Forward Citations

Loading…