The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2021
Filed:
Nov. 26, 2019
Applicant:
Infineon Technologies Dresden Gmbh & Co. KG, Dresden, DE;
Inventors:
Markus Beninger-Bina, Grosshelfendorf, DE;
Matteo Dainese, Munich, DE;
Ingo Dirnstorfer, Dresden, DE;
Erich Griebl, Dorfen, DE;
Caspar Leendertz, Munich, DE;
Christian Philipp Sandow, Haar, DE;
Assignee:
Infineon Technologies Dresden GmbH & Co. KG, Dresden, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 29/66 (2006.01); H01L 27/082 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7397 (2013.01); H01L 27/0823 (2013.01); H01L 29/66348 (2013.01);
Abstract
A power semiconductor switch includes a cross-trench structure associated with at least one IGBT cell. The cross-trench structure merge at least one control trench, at least one dummy trench and at least one further trench of at least one IGBT cell to each other. The cross-trench structure overlaps at least partially along a vertical direction with trenches of the at least one IGBT-cell.