The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2021
Filed:
Jan. 08, 2019
United Microelectronics Corp., Hsin-Chu, TW;
Hsiao-Pang Chou, Taipei, TW;
Hon-Huei Liu, Kaohsiung, TW;
Ming-Chang Lu, Changhua County, TW;
Chin-Fu Lin, Tainan, TW;
Yu-Cheng Tung, Kaohsiung, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
The present invention discloses a semiconductor structure with an epitaxial layer and method of manufacturing the same. The semiconductor structure with the epitaxial layer includes a substrate, a blocking layer on the substrate, multiple recesses formed in the substrate, wherein the recess extends along <> crystal faces of the substrate, and an epitaxial layer on the blocking layer, wherein the epitaxial layer is provided with a buried portion in each recess and an above-surface portion formed on the blocking layer.