The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2021
Filed:
Jan. 17, 2017
Hitachi High-tech Corporation, Tokyo, JP;
Daisuke Bizen, Tokyo, JP;
Natsuki Tsuno, Tokyo, JP;
Takafumi Miwa, Tokyo, JP;
Makoto Sakakibara, Tokyo, JP;
Toshiyuki Yokosuka, Tokyo, JP;
Hideyuki Kazumi, Tokyo, JP;
HITACHI HIGH-TECH CORPORATION, Tokyo, JP;
Abstract
Provided is a scanning electron microscope. The scanning electron microscope is capable of removing a charge generated on a side wall of a deep hole or groove, and inspects and measures a bottom portion of the deep hole or groove with high accuracy. Therefore, in the scanning electron microscope that includes an electron sourcethat emits a primary electron, a sample stageon which a sample is placed, a deflectorthat causes the sample to be scanned with the primary electron, an objective lensthat focuses the primary electron on the sample, and a detectorthat detects a secondary electron generated by irradiating the sample with the primary electron, a potential applied to the sample stage is controlled to have a negative polarity with respect to a potential applied to the objective lens during a first period in which the sample is irradiated with the primary electron, and the potential applied to the sample stage is controlled to have a positive polarity with respect to the potential applied to the objective lens during a second period in which the sample is not irradiated with the primary electron.