The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2021
Filed:
Dec. 01, 2019
United Microelectronics Corp., Hsin-Chu, TW;
Chih-Tung Yeh, Taoyuan, TW;
Shin-Chuan Huang, Tainan, TW;
Chun-Ming Chang, Kaohsiung, TW;
Bo-Rong Chen, Hsinchu County, TW;
Wen-Jung Liao, Hsinchu, TW;
Chun-Liang Hou, Hsinchu County, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A high-electron mobility transistor includes a substrate; a buffer layer on the substrate; a AlGaN layer on the buffer layer; a passivation layer on the AlGaN layer; a source region and a drain region on the AlGaN layer; a source layer and a drain layer on the AlGaN layer within the source region and the drain region, respectively; a gate on the AlGaN layer between the source region and a drain region; and a field plate on the gate and the passivation layer. The field plate includes an extension portion that laterally extends to an area between the gate and the drain region. The extension portion has a wave-shaped bottom surface.