The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2021
Filed:
Mar. 22, 2017
Intel Corporation, Santa Clara, CA (US);
Seiyon Kim, Portland, OR (US);
Uygar E. Avci, Portland, OR (US);
Joshua M. Howard, Portland, OR (US);
Ian A. Young, Portland, OR (US);
Daniel H. Morris, Hillsboro, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Memory field-effect transistors and methods of manufacturing the same are disclosed. An example apparatus includes a semiconductor substrate and a ferroelectric gate insulator of a memory field-effect transistor formed within a trench having walls defined by spacers and a base defined by the semiconductor substrate. The apparatus further includes a gate conductor formed on the ferroelectric gate insulator. The ferroelectric gate insulator is to separate a bottom surface of the gate conductor and the substrate.