The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2021
Filed:
Apr. 27, 2020
Applied Materials, Inc., Santa Clara, CA (US);
Lin Xue, San Diego, CA (US);
Chi Hong Ching, Santa Clara, CA (US);
Xiaodong Wang, San Jose, CA (US);
Mahendra Pakala, Santa Clara, CA (US);
Rongjun Wang, Dublin, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
Embodiments of the disclosure provide methods for forming MTJ structures from a film stack disposed on a substrate for MRAM applications and associated MTJ devices. The methods described herein include forming the film properties of material layers from the film stack to create a film stack with a sufficiently high perpendicular magnetic anisotropy (PMA). An iron containing oxide capping layer is utilized to generate the desirable PMA. By utilizing an iron containing oxide capping layer, thickness of the capping layer can be more finely controlled and reliance on boron at the interface of the magnetic storage layer and the capping layer is reduced.