The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2021
Filed:
Dec. 11, 2018
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Kuo-Cheng Chiang, Zhubei, TW;
Guan-Lin Chen, Baoshan Township, TW;
Chao-Hsiung Wang, Hsinchu, TW;
Chi-Wen Liu, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 21/0262 (2013.01); H01L 21/02236 (2013.01); H01L 21/02529 (2013.01); H01L 21/02532 (2013.01); H01L 21/30625 (2013.01); H01L 29/785 (2013.01); H01L 21/02579 (2013.01);
Abstract
A device includes a fin structure protruding over a substrate, wherein the fin structure comprises a plurality of portions formed of different materials, a first carbon doped layer formed between two adjacent portions of the plurality of portions, a second carbon doped layer formed underlying a first source/drain region and a third carbon doped layer formed underlying a second source/drain region.