The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2021
Filed:
Dec. 24, 2019
Applicant:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Inventors:
Qiang Tang, Wuhan, CN;
Xiang Fu, Wuhan, CN;
Assignee:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 8/00 (2006.01); G11C 16/34 (2006.01); G11C 16/08 (2006.01); G11C 29/44 (2006.01); G11C 16/10 (2006.01); G11C 16/28 (2006.01); G11C 16/14 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3436 (2013.01); G11C 16/08 (2013.01); G11C 16/107 (2013.01); G11C 16/14 (2013.01); G11C 16/28 (2013.01); G11C 29/44 (2013.01);
Abstract
An erasing method is used in a memory device. The memory device includes a string of memory cells and a controller, the string of memory cells including a plurality of special memory cells not for storing data and a plurality of main memory cells for storing data. The erasing method includes: the controller verifying if at least one special memory cell of the plurality of special memory cells has failed; the controller resetting the at least one special memory cell if the at least one special memory cell has failed; and the controller erasing the plurality of main memory cells.