The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2021
Filed:
Nov. 26, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Victor Chiang Liang, Hsinchu, TW;
Chi-Feng Huang, Hsinchu County, TW;
Chia-Chung Chen, Keelung, TW;
Chun-Pei Wu, Nantou County, TW;
Fu-Huan Tsai, Kaohsiung, TW;
Chung-Hao Chu, Hsinchu, TW;
Chin-Nan Chang, Tainan, TW;
Ching-Yu Yang, Taichung, TW;
Ankush Chaudhary, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a gate stack, a first doped region, a second doped region, and a buried doped region. The first doped region has a first conductivity type and is located in the substrate at a first side of the gate stack. The second doped region has the first conductivity type and is located in the substrate at a second side of the gate stack. The buried doped region has the first conductivity type and is buried in the substrate, extended from the first doped region to the second doped region, and separated from the gate stack by a distance.