The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2021
Filed:
Sep. 25, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A fin-based transistor and method for making same. In some embodiments, the transistor includes a first fin and a second fin formed on a substrate, the first and second fins being laterally spaced from each other, wherein an upper portion of the first fin is doped with a first type of dopant and an upper portion of the second fin is doped with a second type of dopant different from the first type of dopant; a protection layer formed over the first and second fins, wherein the protection layer comprises a dielectric material selected from a group comprising: silicon nitride, silicon oxynitride, and a combination thereof; and source and drain features formed in respective side portions of the first and second fins.