The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2021
Filed:
Oct. 30, 2019
Applicant:
Ememory Technology Inc., Hsin-Chu, TW;
Inventors:
Tsung-Mu Lai, Hsinchu County, TW;
Chih-Hsin Chen, Hsinchu County, TW;
Chun-Fu Lin, Hsinchu County, TW;
Assignee:
eMemory Technology Inc., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); G11C 16/04 (2006.01); G11C 16/26 (2006.01); G06F 3/06 (2006.01); G11C 16/14 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G06F 3/0604 (2013.01); G06F 3/0629 (2013.01); G06F 3/0683 (2013.01); G11C 16/0425 (2013.01); G11C 16/0433 (2013.01); G11C 16/14 (2013.01); G11C 16/26 (2013.01);
Abstract
A non-volatile memory cell includes a storage transistor having a first terminal, a second terminal, and a gate terminal. During a program operation, the first terminal of the storage transistor receives a data voltage according to a weighting to be stored in the non-volatile memory cell, the second terminal of the storage transistor is floating, and the gate terminal of the storage transistor is coupled to a program voltage. The program voltage is greater than the data voltage.