The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 27, 2021

Filed:

Apr. 19, 2018
Applicant:

Mitsui Chemicals, Inc., Tokyo, JP;

Inventors:

Jun Kamada, Narashino, JP;

Kaichiro Haruta, Ichihara, JP;

Takashi Unezaki, Ichihara, JP;

Kiyomi Imagawa, Chiba, JP;

Kenichi Fujii, Yokohama, JP;

Yasuhisa Kayaba, Urayasu, JP;

Kazuo Kohmura, Chiba, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09J 179/08 (2006.01); C09J 5/00 (2006.01); H01L 21/304 (2006.01); H01L 21/56 (2006.01);
U.S. Cl.
CPC ...
C09J 179/08 (2013.01); C09J 5/00 (2013.01); H01L 21/304 (2013.01); H01L 21/56 (2013.01);
Abstract

The purpose of the present invention is to provide a semiconductor substrate manufacturing method, which prevents detachment of a semiconductor wafer being ground, and which prevents cracking or chipping in a semiconductor substrate obtained. In order to solve the problem, the semiconductor substrate manufacturing method comprises: a polyimide layer forming step of forming a polyimide layer on a support material; a wafer attaching step of affixing the support material and a semiconductor wafer to each other with the polyimide layer disposed therebetween; a wafer grinding step of grinding the semiconductor wafer; a support material peeling step of peeling the support material from the polyimide layer; and a polyimide layer peeling step of peeling the polyimide layer from the semiconductor wafer. The polyimide layer includes polyimide which includes a benzophenone skeleton and an aliphatic structure, wherein an amine equivalent weight is 4000 to 20000.


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