The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2021
Filed:
Oct. 01, 2019
United Semiconductor (Xiamen) Co., Ltd., Fujian, CN;
Jung-Chun Yen, Taichung, TW;
Chien-Chih Wang, Tainan, TW;
Guang Yang, Fujian, CN;
Jiawei Lyu, Quanzhou, CN;
Linshan Yuan, Fujian, CN;
Wen Yi Tan, Fujian, CN;
United Semiconductor (Xiamen) Co., Ltd., Fujian, CN;
Abstract
A semiconductor memory device includes a substrate, at least one floating gate electrode, an interlayer dielectric layer, an interconnection structure, an etching stop layer, a conductive structure, and an opening. The floating gate electrode is disposed on the substrate. The interlayer dielectric layer is disposed on the floating gate electrode. The interconnection structure is disposed in the interlayer dielectric layer. The etching stop layer is disposed on the interlayer dielectric layer. The conductive structure penetrates the etching stop layer and is electrically connected with the interconnection structure. The opening penetrates the etching stop layer and overlaps at least a part of the floating gate electrode in a thickness direction of the substrate.