The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2021
Filed:
Dec. 22, 2010
Peng Chen, Beijing, CN;
Mengxin Zhao, Beijing, CN;
Gang Wei, Beijing, CN;
Liang Zhang, Beijing, CN;
Bai Yang, Beijing, CN;
Guilong Wu, Beijing, CN;
Peijun Ding, Beijing, CN;
Peng Chen, Beijing, CN;
Mengxin Zhao, Beijing, CN;
Gang Wei, Beijing, CN;
Liang Zhang, Beijing, CN;
Bai Yang, Beijing, CN;
Guilong Wu, Beijing, CN;
Peijun Ding, Beijing, CN;
BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD., Beijing, CN;
Abstract
A plasma processing apparatus includes a chamber () and a target () above the chamber (). The surface of the target () contacts the processing area of the chamber (). The chamber () includes an insulating sub-chamber () and a first conductive sub-chamber (), which are superposed. The first conductive sub-chamber () is provided under the insulating sub-chamber (). The insulating sub-chamber () is made of insulating material, and the first conductive sub-chamber () is made of metal material. A Faraday shield component () which is made of metal material or insulating material electroplated with conductive coatings and includes at least one slit is provided in the insulating sub-chamber (). An inductance coil () surrounds the exterior of the insulating sub-chamber (). The problem about the wafer contamination due to particles formed on the surface of the coil during the sputtering process can be solved by using the plasma processing apparatus.