The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 20, 2021

Filed:

May. 14, 2018
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Chia-Chen Sun, Kaohsiung, TW;

Yu-Cheng Tung, Kaohsiung, TW;

Sheng-Yuan Hsueh, Tainan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 30/39 (2020.01); G03F 1/36 (2012.01);
U.S. Cl.
CPC ...
G03F 1/36 (2013.01); G06F 30/39 (2020.01);
Abstract

A mask includes a substrate, a main pattern, a first assist pattern, and a second assist pattern. The main pattern is disposed on the substrate. The main pattern includes a first pattern and second patterns. Two of the second patterns are disposed at two opposite sides of the first pattern in a first direction. The first assist pattern is disposed on the substrate and disposed in the main pattern. The second assist pattern is disposed on the substrate and disposed outside the main pattern. The first assist pattern disposed in the main pattern may be used to improve the pattern transferring performance in a photolithography process using the mask.


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