The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2021
Filed:
Nov. 19, 2018
Applicant:
Cree, Inc., Durham, NC (US);
Inventors:
Yueying Liu, Morrisville, NC (US);
Saptharishi Sriram, Cary, NC (US);
Scott Sheppard, Chapel Hill, NC (US);
Jennifer Gao, Burlington, NC (US);
Assignee:
Cree, Inc., Durham, NC (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/201 (2006.01); H01L 29/10 (2006.01); H01L 29/47 (2006.01); H01L 29/778 (2006.01); H01L 29/423 (2006.01); H01L 29/417 (2006.01); H03F 3/193 (2006.01); H03F 3/21 (2006.01); H01L 27/085 (2006.01); H01L 29/06 (2006.01); H03F 3/42 (2006.01); H03F 3/195 (2006.01); H03F 1/32 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 27/085 (2013.01); H01L 29/0696 (2013.01); H01L 29/42316 (2013.01); H01L 29/7786 (2013.01); H03F 3/193 (2013.01); H03F 3/195 (2013.01); H03F 3/21 (2013.01); H03F 3/211 (2013.01); H03F 3/423 (2013.01); H01L 29/2003 (2013.01); H03F 2200/366 (2013.01);
Abstract
A semiconductor device includes a plurality of unit cell transistors on a common semiconductor structure, the unit cell transistors electrically connected in parallel, and each unit cell transistor including a respective gate finger. Respective threshold voltages of first and second of the unit cell transistors differ by at least 0.1 volts and/or threshold voltages of first and second segments of a third of the unit cell transistors differ by at least 0.1 volts.