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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10978362 B1

PDFFull Text
Date of Patent:
Apr. 13, 2021

Filed:

Nov. 14, 2019

Semiconductor structure with conductive structure

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Pei-Chun Tsai, Zhongli, TW;

Wei-Sen Chang, Jinsha Township, Kinmen County, TW;

Tin-Hao Kuo, Hsinchu, TW;

Hao-Yi Tsai, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Dao H Nguyen

Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 23/00 (2006.01); H01L 21/78 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/538 (2006.01); H01L 23/31 (2006.01); H01L 25/10 (2006.01); H01L 25/00 (2006.01); H01L 23/498 (2006.01); H01L 25/065 (2006.01); G01R 31/28 (2006.01); G01R 31/00 (2006.01); G01R 1/073 (2006.01); G01R 31/50 (2020.01);
U.S. Cl.
CPC ...
H01L 22/32 (2013.01); G01R 1/073 (2013.01); G01R 31/00 (2013.01); G01R 31/28 (2013.01); G01R 31/50 (2020.01); H01L 21/486 (2013.01); H01L 21/4853 (2013.01); H01L 21/565 (2013.01); H01L 21/78 (2013.01); H01L 22/14 (2013.01); H01L 22/20 (2013.01); H01L 23/3114 (2013.01); H01L 23/5385 (2013.01); H01L 23/5386 (2013.01); H01L 23/5389 (2013.01); H01L 24/02 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 25/105 (2013.01); H01L 25/50 (2013.01); H01L 21/4857 (2013.01); H01L 23/3128 (2013.01); H01L 23/49811 (2013.01); H01L 23/49816 (2013.01); H01L 23/5383 (2013.01); H01L 23/5384 (2013.01); H01L 24/96 (2013.01); H01L 25/0657 (2013.01); H01L 2224/02373 (2013.01); H01L 2224/02377 (2013.01); H01L 2224/0392 (2013.01); H01L 2224/03831 (2013.01); H01L 2224/03845 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/05008 (2013.01); H01L 2224/05024 (2013.01); H01L 2224/05569 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/13026 (2013.01); H01L 2224/19 (2013.01); H01L 2224/20 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/73267 (2013.01); H01L 2224/96 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06568 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1058 (2013.01); H01L 2924/15311 (2013.01);
Abstract

A method for forming a semiconductor device structure and method for forming the same are provided. The method includes forming a conductive pad over the substrate, and forming a protection layer over the conductive pad. The method also includes forming a conductive structure accessibly arranged through the protection layer and electrically connected to the conductive pad, and the conductive structure has a curved top surface. A lowest point of the curved top surface of the conductive structure is higher than a topmost surface of the protection layer.

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