The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2021
Filed:
Mar. 29, 2019
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Jerome A. Imonigie, Boise, ID (US);
Adriel Jebin Jacob Jebaraj, Boise, ID (US);
Brian J. Kerley, Boise, ID (US);
Sanjeev Sapra, Boise, ID (US);
Ashwin Panday, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); H01L 49/02 (2006.01); H01L 21/311 (2006.01); H01L 27/108 (2006.01); H01L 21/3213 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 21/02 (2006.01); H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30604 (2013.01); H01L 21/02211 (2013.01); H01L 21/302 (2013.01); H01L 21/31111 (2013.01); H01L 21/31116 (2013.01); H01L 21/32135 (2013.01); H01L 21/823487 (2013.01); H01L 21/823821 (2013.01); H01L 27/10861 (2013.01); H01L 27/10879 (2013.01); H01L 28/92 (2013.01);
Abstract
Methods, apparatuses, and systems related to forming a recess in a semiconductor structure are described. An example method includes etching the semiconductor structure using an elevated temperature dilution of acid and water. The method further includes etching the semiconductor structure using a room temperature wet etch of acid and water and a surface modification chemistry.