The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 06, 2021

Filed:

Sep. 27, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Son V. Nguyen, Schenectady, NY (US);

Alexander Reznicek, Troy, NY (US);

Donald F. Canaperi, Bridgewater, CT (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 43/12 (2006.01); H01L 43/08 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); H01L 27/222 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01);
Abstract

Magnetic tunnel junction pillars are encapsulated by an oxidized diffusion barrier layer. Oxygen within the encapsulating material is used to oxidize metallic residue outside the pillars, converting the residue to a non-conductive material such as a metal oxide or metal oxynitride. Selective deposition of manganese on the metal layers of the pillars can be followed by oxidation of the manganese to form a manganese oxide diffusion barrier. Alternatively, manganese deposition can be followed by deposition of silicon dioxide and subsequent annealing to form a manganese silicate diffusion barrier.


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