The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2021
Filed:
Sep. 20, 2018
United Microelectronics Corp., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, CN;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, unknown;
Abstract
A semiconductor memory device and a method of forming the same, the semiconductor memory device includes a substrate, a dielectric layer, plural bit lines, at least one bit line contact, a spacer structure and a spacer layer. The substrate has an isolation area to define plural active areas. The dielectric layer is disposed on the substrate, and the dielectric layer includes a bottom layer having a sidewall being retracted from sidewalls of other layers of the dielectric layer. The plural bit lines are disposed on the dielectric stacked structure, along a direction, and the at least one bit line contact is disposed below one of the bit lines, within the substrate. The spacer structure is disposed at sidewalls of each of the bit lines, and the spacer layer is disposed on the spacer structure to directly in contact with the spacer structure and the other layers of the dielectric layer.