The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2021
Filed:
May. 18, 2018
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Yu-Chi Chang, Kaohsiung, TW;
Hsin-Li Cheng, Hsinchu County, TW;
Felix Ying-Kit Tsui, Cupertino, CA (US);
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/265 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823462 (2013.01); H01L 21/2652 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 29/105 (2013.01); H01L 29/6653 (2013.01); H01L 29/6659 (2013.01); H01L 29/7833 (2013.01); H01L 21/823842 (2013.01);
Abstract
A semiconductor device includes a semiconductor substrate, and a first transistor. The first transistor has a first gate on the semiconductor substrate, and a first lightly doped source/drain region within the semiconductor substrate to determine a first channel region beneath the first gate. A doping ratio determined as a concentration of the first lightly doped source/drain region divided by a concentration of the first channel region ranges from 1.0×10to 1.0×10.