The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2021
Filed:
Dec. 13, 2019
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Min Gyu Sung, Essex, MA (US);
Naushad K. Variam, Marblehead, MA (US);
Sony Varghese, Manchester, MA (US);
Johannes Van Meer, Middleton, MA (US);
Jae Young Lee, Bedford, MA (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
A method for forming a semiconductor device. The method may include providing a transistor structure, where the transistor structure includes a fin array, the fin array including a plurality of semiconductor fins, disposed on a substrate. A liner may be disposed on the plurality of semiconductor fins. The method may include directing first angled ions to the fin array, wherein the liner is removed in an upper portion of the plurality of semiconductor fins, and wherein the liner remains in a lower portion of the at least one of the plurality of semiconductor fins, and wherein the upper portion comprises an active fin region to form a transistor device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile