The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 06, 2021

Filed:

Dec. 13, 2018
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Prashant Kumar Kulshreshtha, San Jose, CA (US);

Ziqing Duan, Sunnyvale, CA (US);

Karthik Thimmavajjula Narasimha, San Francisco, CA (US);

Kwangduk Douglas Lee, Redwood City, CA (US);

Bok Hoen Kim, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/32 (2006.01); H01L 21/033 (2006.01); H01L 21/3065 (2006.01); C23C 16/505 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0338 (2013.01); C23C 16/32 (2013.01); C23C 16/505 (2013.01); H01L 21/02112 (2013.01); H01L 21/02274 (2013.01); H01L 21/0332 (2013.01); H01L 21/0335 (2013.01); H01L 21/0337 (2013.01); H01L 21/3065 (2013.01);
Abstract

Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-carbon films on a substrate. In one implementation, a method of processing a substrate is provided. The method comprises flowing a hydrocarbon-containing gas mixture into a processing volume of a processing chamber having a substrate positioned therein, wherein the substrate is heated to a substrate temperature from about 400 degrees Celsius to about 700 degrees Celsius, flowing a boron-containing gas mixture into the processing volume and generating an RF plasma in the processing volume to deposit a boron-carbon film on the heated substrate, wherein the boron-carbon film has an elastic modulus of from about 200 to about 400 GPa and a stress from about −100 MPa to about 100 MPa.


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