The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2021
Filed:
Oct. 04, 2018
Applied Materials, Inc., Santa Clara, CA (US);
Wei Liu, San Jose, CA (US);
Theresa Kramer Guarini, San Jose, CA (US);
Linlin Wang, Fremont, CA (US);
Malcolm Bevan, Santa Clara, CA (US);
Johanes S. Swenberg, Los Gatos, CA (US);
Vladimir Nagorny, Tracy, CA (US);
Bernard L. Hwang, Santa Clara, CA (US);
Kin Pong Lo, Fremont, CA (US);
Lara Hawrylchak, Gilroy, CA (US);
Rene George, San Carlos, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of modifying a layer in a semiconductor device is provided. The method includes depositing a low quality film on a semiconductor substrate, and exposing a surface of the low quality film to a first process gas comprising helium while the substrate is heated to a first temperature, and exposing a surface of the low quality film to a second process gas comprising oxygen gas while the substrate is heated to a second temperature that is different than the first temperature. The electrical properties of the film are improved by undergoing the aforementioned processes.