The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 30, 2021

Filed:

Jul. 18, 2019
Applicant:

Globalfoundries U.s. Inc., Santa Clara, CA (US);

Inventors:

Bingwu Liu, Clifton Park, NY (US);

Tao Chu, Portland, OR (US);

Man Gu, Malta, NY (US);

Assignee:

GLOBALFOUNDRIES U.S. Inc., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823431 (2013.01); H01L 21/823412 (2013.01); H01L 29/0607 (2013.01); H01L 29/1033 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract

One illustrative method disclosed herein includes forming at least one fin, forming a first recessed layer of insulating material adjacent the at least one fin and forming epi semiconductor material on the at least one fin. In this example, the method also includes forming a second recessed layer of insulating material above the first recessed layer of insulating material, wherein at least a portion of the epi semiconductor material is positioned above a level of the upper surface of the second recessed layer of insulating material, and forming a source/drain contact structure above the second recessed layer of insulating material, wherein the source/drain contact structure is conductively coupled to the epi semiconductor material.


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