The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2021
Filed:
Feb. 25, 2019
Applicant:
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Inventors:
Shen-Nan Lee, Jhudong Township, TW;
Teng-Chun Tsai, Hsinchu, TW;
Chu-An Lee, Hsinchu, TW;
Chen-Hao Wu, Hsinchu, TW;
Chun-Hung Liao, Taichung, TW;
Huang-Lin Chao, Hillsboro, OR (US);
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/3105 (2006.01); B24B 37/04 (2012.01); C09G 1/02 (2006.01); C09K 3/14 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31055 (2013.01); B24B 37/044 (2013.01); C09G 1/02 (2013.01); C09K 3/1409 (2013.01); H01L 21/0223 (2013.01); H01L 21/02065 (2013.01);
Abstract
A wafer is polished by performing a chemical reaction to change a property of a first portion of a material layer on the wafer using a first chemical substance. A first rinse is performed to remove the first chemical substance and retard the chemical reaction. A mechanical polishing process is then performed to remove the first portion of the material layer.