The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 30, 2021

Filed:

Dec. 16, 2019
Applicant:

Rohm and Haas Electronic Materials Llc, Marlborough, MA (US);

Inventors:

Mitsuru Haga, Minamikanbara-gun, JP;

Shugaku Kushida, Niigata, JP;

Kunio Kainuma, Shibata, JP;

James F. Cameron, Brookline, MA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/004 (2006.01); G03F 7/38 (2006.01); G03F 7/40 (2006.01); G03F 7/039 (2006.01); H01L 21/3205 (2006.01); G03F 7/20 (2006.01); C23C 18/16 (2006.01); C23C 18/18 (2006.01); C23C 18/38 (2006.01); G03F 7/00 (2006.01); G03F 7/32 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0045 (2013.01); C23C 18/1612 (2013.01); C23C 18/1667 (2013.01); C23C 18/1689 (2013.01); C23C 18/1844 (2013.01); C23C 18/38 (2013.01); G03F 7/0035 (2013.01); G03F 7/0046 (2013.01); G03F 7/039 (2013.01); G03F 7/0392 (2013.01); G03F 7/0397 (2013.01); G03F 7/2002 (2013.01); G03F 7/2004 (2013.01); G03F 7/2006 (2013.01); G03F 7/322 (2013.01); G03F 7/40 (2013.01); H01L 21/32056 (2013.01);
Abstract

A patterning process, comprises: (i) forming a radiation-sensitive film on a substrate, wherein the radiation-sensitive film comprises: (a) a resin, (b) a photoacid generator, (c) a first quencher, and (d) a second quencher; (ii) patternwise exposing the radiation-sensitive film to activating radiation; and (iii) contacting the radiation-sensitive film with an alkaline developing solution to form a resist pattern; wherein the resin comprises the following repeat units: wherein: Ris selected from a hydrogen atom, an alkyl group having from 1 to 4 carbon atoms, a cyano group or a trifluoromethyl group; Z is a non-hydrogen substituent that provides an acid-labile moiety; n is from 40 to 90 mol %; m is from 10 to 60 mol %; and the total combined content of the two repeat units in the resin is 80 mol % or more based on all repeat units of the resin; and the first quencher is selected from benzotriazole or a derivative thereof.


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