The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2021
Filed:
May. 03, 2019
Keithley Instruments, Llc, Solon, OH (US);
Alexander N. Pronin, Twinsburg, OH (US);
Mary Anne Tupta, Twinsburg, OH (US);
Keithley Instruments, LLC, Solon, OH (US);
Abstract
A testing environment includes a first measuring unit connected to a gate of a MOSFET device and a second measuring unit connected to a drain of the MOSFET device. The testing environment is particularly useful for testing gate charge for MOSFET devices. In a first phase, the gate of the device is driven with electrical current while the drain is driven with a constant voltage. As the MOSFET device turns on, the second measuring unit switches from providing the constant voltage to providing a constant current to the drain of the MOSFET, while measuring the drain voltage. The switching of modes is automatic and occurs without user intervention. After the MOSFET device has been driven to VgsMax by the gate current, all of the relevant data is stored, which may be analyzed and presented to a user in a User Interface or presented in other manner.