The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 23, 2021

Filed:

Feb. 28, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Pranita Kerber, Mount Kisco, NY (US);

Effendi Leobandung, Stormville, NY (US);

Philip J. Oldiges, Lagrangeville, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 21/385 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 29/0847 (2013.01); H01L 29/6656 (2013.01); H01L 29/66553 (2013.01); H01L 29/66621 (2013.01); H01L 29/66628 (2013.01); H01L 21/385 (2013.01);
Abstract

A U-shaped gate dielectric structure is provided that has a horizontal gate dielectric portion having a vertical thickness, and a vertical gate dielectric wall portion extending upwards from the horizontal gate dielectric portion. The vertical gate dielectric wall portion has a lateral thickness that is greater than the vertical thickness of the horizontal gate dielectric portion. The U-shaped gate dielectric structure houses a gate conductor portion. Collectively, the U-shaped gate dielectric structure and the gate conductor portion provide a functional gate structure that has reduced capacitance.


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