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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10957697 B1

PDFFull Text
Date of Patent:
Mar. 23, 2021

Filed:

Aug. 13, 2018

Polysilicon structure including protective layer

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yu-Shao Cheng, Taipei, TW;

Shin-Yeu Tsai, Zhubei, TW;

Chui-Ya Peng, Hsinchu, TW;

Kung-Wei Lee, New Taipei, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Hauptman Ham, LLP

Primary Examiner:

John A Bodnar

Int. Cl.
CPC ...
H01L 21/8222 (2006.01); H01L 21/8238 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 21/3205 (2006.01); H01L 29/78 (2006.01); H01L 27/11 (2006.01); H01L 27/06 (2006.01); H01L 21/311 (2006.01); H01L 27/092 (2006.01); H01L 21/28 (2006.01); H01L 27/112 (2006.01);
U.S. Cl.
CPC ...
H01L 27/092 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/28247 (2013.01); H01L 21/31111 (2013.01); H01L 21/31116 (2013.01); H01L 21/32051 (2013.01); H01L 21/32055 (2013.01); H01L 21/8222 (2013.01); H01L 21/8238 (2013.01); H01L 21/82385 (2013.01); H01L 21/823864 (2013.01); H01L 27/0623 (2013.01); H01L 27/11 (2013.01); H01L 29/6653 (2013.01); H01L 29/66234 (2013.01); H01L 29/66674 (2013.01); H01L 29/7801 (2013.01); H01L 27/11206 (2013.01);
Abstract

A manufacture includes a substrate comprising a first portion and a second portion. The manufacture further includes a first polysilicon structure over the first portion of the substrate. The manufacture further includes a second polysilicon structure over the second portion of the substrate. The manufacture further includes two spacers on opposite sidewalls of the second polysilicon structure, wherein each spacer of the two spacers has a concave corner region between an upper portion and a lower portion. The manufacture further includes a protective layer covering the first portion of the substrate and the first polysilicon structure, the protective layer exposing the second portion of the substrate, the second polysilicon structure, and partially exposing the two spacers.

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