The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2021
Filed:
Oct. 18, 2018
Nexperia B.v., Nijmegen, NL;
Steffen Holland, Hamburg, DE;
Zhihao Pan, Nijmegen, NL;
Jochen Wynants, Nijmegen, NL;
Hans-Martin Ritter, Hamburg, DE;
Tobias Sprogies, Hamburg, DE;
Thomas Igel-Holtzendorff, Nijmegen, NL;
Wolfgang Schnitt, Hamburg, DE;
Joachim Utzig, Nijmegen, NL;
Nexperia B.V., Nijmegen, NL;
Abstract
A semiconductor device and method of manufacturing a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a semiconductor layer located on the substrate; at least one shallow trench and at least one deep trench. Each of the at least one shallow trench and the at least one deep trench extending from a first major surface of the semiconductor layer. Sidewall regions and base regions of the trenches comprise a doped trench region and the trenches are at least partially filled with a conductive material contacting the doped region. The shallow trenches terminate in the semiconductor layer and the deep trench terminates in the semiconductor substrate.