The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 23, 2021

Filed:

May. 29, 2019
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Tung-Jiun Wu, Hsinchu County, TW;

Mingni Chang, Hsinchu, TW;

Ming-Yih Wang, Hsin-Chu, TW;

Yinlung Lu, Hsinchu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 24/03 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 2224/0226 (2013.01); H01L 2224/02235 (2013.01); H01L 2224/02251 (2013.01); H01L 2224/02255 (2013.01); H01L 2224/03614 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05018 (2013.01); H01L 2224/13026 (2013.01); H01L 2224/13147 (2013.01); H01L 2924/07025 (2013.01); H01L 2924/3512 (2013.01);
Abstract

A semiconductor structure and manufacturing method thereof are provided. The semiconductor structure includes a metallization structure with a dielectric surface. A first protecting structure is on the dielectric surface. A conductive pad is on the dielectric surface and is leveled with the first protecting structure. A polymer layer is over the first protecting structure and the conductive pad. A conductive bump is electrically coupled to the conductive pad through an opening of the polymer layer. A method for manufacturing a semiconductor structure is also provided.


Find Patent Forward Citations

Loading…