The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2021
Filed:
Nov. 16, 2017
Applicant:
Kla-tencor Corporation, Milpitas, CA (US);
Inventors:
Arpit Yati, Lucknow, IN;
Shivam Agarwal, Ghaziabad, IN;
Jagdish Saraswatula, Chennai, IN;
Andrew Cross, Cheshire, GB;
Assignee:
KLA-Tencor Corporation, Milpitas, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01J 37/28 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 22/12 (2013.01); H01J 37/28 (2013.01); H01L 21/67288 (2013.01); H01L 22/20 (2013.01); H01J 2237/22 (2013.01); H01J 2237/24592 (2013.01); H01J 2237/2809 (2013.01); H01J 2237/2817 (2013.01); H01J 2237/31798 (2013.01);
Abstract
A wafer topography measurement system can be paired with a scanning electron microscope. A topography threshold can be applied to wafer topography data about the wafer, which was obtained with the wafer topography measurement system. A metrology sampling plan can be generated for the wafer. This metrology sampling plan can include locations in the wafer topography data above the topography threshold. The scanning electron microscope can scan the wafer using the metrology sampling plan and identify defects.