The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 23, 2021

Filed:

Dec. 02, 2019
Applicant:

Disco Corporation, Tokyo, JP;

Inventors:

Yoshiteru Nishida, Tokyo, JP;

Hidekazu Iida, Tokyo, JP;

Kenta Chito, Tokyo, JP;

Youngsuk Kim, Tokyo, JP;

Assignee:

DISCO CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 21/02 (2006.01); H01L 21/304 (2006.01); H01L 21/768 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76898 (2013.01); H01L 21/304 (2013.01); H01L 21/3065 (2013.01);
Abstract

A method of processing a wafer includes a grinding step of grinding a wafer that has first insulating films covering via electrodes, from a reverse side thereof, an electrode protruding step of protruding the via electrodes covered with the first insulating films from the reverse side by way of etching, a distorted layer forming step of forming a distorted layer on the reverse side of the wafer, an insulating film forming step of forming a second insulating film on the reverse side of the wafer, and an electrode forming step of removing the first insulating films and the second insulating film from the regions where they overlap the via electrodes, and forming reverse-side electrodes connected to the via electrodes.


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