The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 23, 2021

Filed:

Aug. 28, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Sean D. Burns, Hopewell Junction, NY (US);

Lawrence A. Clevenger, Saratoga Springs, NY (US);

Matthew E. Colburn, Schenectady, NY (US);

Sivananda K. Kanakasabapathy, Pleasanton, CA (US);

Yann A. M. Mignot, Slingerlands, NY (US);

Christopher J. Penny, Saratoga Springs, NY (US);

Roger A. Quon, Rhinebeck, NY (US);

Nicole A. Saulnier, Albany, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 23/528 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 21/033 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76816 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/0337 (2013.01); H01L 21/31116 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/53266 (2013.01); H01L 21/027 (2013.01); H01L 21/02697 (2013.01); H01L 21/0338 (2013.01); H01L 21/76885 (2013.01); H01L 21/76886 (2013.01); H01L 21/76892 (2013.01);
Abstract

An interconnect structure having a pitch of less than 40 nanometers and a self-aligned quadruple patterning process for forming the interconnect structure includes three types of lines: a β line defined by a patterned bottom mandrel formed in the self-aligned quadruple patterning process; a γ line defined by location underneath a top mandrel formed in the self-aligned quadruple patterning process; and an α line defined by elimination located underneath neither the top mandrel or the bottom mandrel formed in the self-aligned quadruple patterning process. The interconnect structure further includes multi-track jogs selected from a group consisting of a βγβ jog; a βαβ jog; an αβγ jog; a γβα jog, and combinations thereof. The first and third positions refer to the uncut line and the second position refers to the cut line in the self-aligned quadruple patterning process.


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