The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 23, 2021

Filed:

Feb. 14, 2018
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Masanori Hosoya, Miyagi, JP;

Soichiro Kimura, Miyagi, JP;

Shinya Morikita, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/455 (2006.01); H01L 21/311 (2006.01); C23C 16/509 (2006.01); C23C 16/26 (2006.01); H01L 21/768 (2006.01); C23C 16/44 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32183 (2013.01); C23C 16/26 (2013.01); C23C 16/4405 (2013.01); C23C 16/45523 (2013.01); C23C 16/509 (2013.01); H01J 37/32449 (2013.01); H01J 37/32862 (2013.01); H01L 21/0234 (2013.01); H01L 21/31116 (2013.01); H01L 21/768 (2013.01); H01L 21/76897 (2013.01); H01J 2237/334 (2013.01);
Abstract

A plasma processing method is provided that includes applying a radio frequency power to an upper electrode of a chamber, and performing a coating process by supplying a coating gas, including a carbon-containing gas, to an interior of the chamber to generate a plasma from the supplied coating gas, and coating the interior of the chamber with a carbon film using the plasma generated from the coating gas. The plasma processing method further includes performing an etching process after the coating process by supplying an etching gas, including a fluorocarbon-containing gas, to the interior of the chamber to generate a plasma from the supplied etching gas and etching a first silicon-containing film that is arranged on a second silicon-containing film covering an electrode formed on a workpiece using the plasma generated from the etching gas.


Find Patent Forward Citations

Hosoya, Masanori. (2021). Plasma processing method and plasma processing apparatus (U.S. Patent No. 10957515). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10957515

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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