The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2021
Filed:
Feb. 15, 2019
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/14 (2006.01); C23C 16/24 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); C23C 16/455 (2006.01); C23C 16/02 (2006.01); C23C 16/52 (2006.01);
U.S. Cl.
CPC ...
C23C 16/14 (2013.01); C23C 16/0281 (2013.01); C23C 16/24 (2013.01); C23C 16/45525 (2013.01); C23C 16/52 (2013.01); H01L 21/28568 (2013.01); H01L 21/76876 (2013.01);
Abstract
There is provided a tungsten film-forming method, including: forming a silicon film on a substrate in a reduced pressure atmosphere by disposing the substrate having a protective film formed on a surface of the substrate in a processing container; forming an initial tungsten film by supplying a tungsten chloride gas to the substrate having the silicon film formed thereon; and forming a main tungsten film by supplying a tungsten-containing gas to the substrate having the initial tungsten film formed thereon.