The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 16, 2021

Filed:

May. 31, 2019
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventors:

Bo-Lun Wu, Tianzhong Township, Changhua County, TW;

Yi-Hsiu Chen, Zhubei, TW;

Ting-Ying Shen, Chiayi, TW;

Po-Yen Hsu, New Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1253 (2013.01); H01L 27/2436 (2013.01); H01L 27/2463 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/146 (2013.01); H01L 45/1683 (2013.01);
Abstract

A resistive random access memory structure includes a semiconductor substrate, a transistor, a bottom electrode, a plurality of top electrodes, and a resistive-switching layer. The transistor is disposed over the semiconductor substrate. The bottom electrode is disposed over the semiconductor substrate and is electrically connected to a drain region of the transistor. The plurality of top electrodes is disposed along a sidewall of the bottom electrode. The resistance-switching layer is disposed between the bottom electrode and the plurality of top electrodes.


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