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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10950751 B1

PDFFull Text
Date of Patent:
Mar. 16, 2021

Filed:

Apr. 28, 2020

Deep ultraviolet led and method for manufacturing the same

Applicants:

Marubun Corporation, Tokyo, JP;

Toshiba Kikai Kabushiki Kaisha, Tokyo, JP;

Riken, Saitama, JP;

Ulvac, Inc., Kanagawa, JP;

Tokyo Ohka Kogyo Co., Ltd., Kanagawa, JP;

Inventors:

Yukio Kashima, Tokyo, JP;

Eriko Matsuura, Tokyo, JP;

Mitsunori Kokubo, Shizuoka, JP;

Takaharu Tashiro, Shizuoka, JP;

Hideki Hirayama, Saitama, JP;

Ryuichiro Kamimura, Shizuoka, JP;

Yamato Osada, Shizuoka, JP;

Toshiro Morita, Kanagawa, JP;

Assignees:

Marubun Corporation, Tokyo, JP;

Toshiba Kikai Kabushiki Kaisha, Tokyo, JP;

RIKEN, Saitama, JP;

ULVAC, INC., Kanagawa, JP;

Tokyo Ohka Kogyo Co., Ltd., Kanagawa, JP;

Attorney:

Hamre, Schumann, Mueller & Larson, P.C.

Primary Examiner:

Samuel A Gebremariam

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 33/10 (2010.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/14 (2010.01); H01L 33/20 (2010.01); H01L 33/58 (2010.01); H01L 33/32 (2010.01); H01L 33/40 (2010.01);
U.S. Cl.
CPC ...
H01L 33/10 (2013.01); H01L 33/007 (2013.01); H01L 33/06 (2013.01); H01L 33/145 (2013.01); H01L 33/20 (2013.01); H01L 33/58 (2013.01); H01L 33/32 (2013.01); H01L 33/405 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0083 (2013.01);
Abstract

Provided is a deep ultraviolet LED with a design wavelength λ, including a reflecting electrode layer, an ultra-thin metal layer, and a p-type contact layer that are arranged in this order from a side opposite to a substrate; and a hemispherical lens bonded to a rear surface of the substrate on a side of the p-type contact layer, the hemispherical lens being transparent to light with the wavelength λ. The refractive index of the hemispherical lens is greater than or equal to the average value of the refractive index of the substrate and the refractive index of air and is less than or equal to the refractive index of the substrate. The hemispherical lens has a radius that is greater than or equal to the radius of an inscribed circle of the substrate and is about equal to the radius of a circumscribed circle of the substrate.

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