The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2021
Filed:
Apr. 21, 2015
Applicants:
Nippon Steel Chemical & Material Co., Ltd., Tokyo, JP;
Nippon Micrometal Corporation, Iruma, JP;
Inventors:
Assignees:
NIPPON STEEL CHEMICAL & MATERIAL CO., LTD., Tokyo, JP;
NIPPON MICROMETAL CORPORATION, Saitama, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B32B 15/01 (2006.01); C25D 5/24 (2006.01); H01L 23/00 (2006.01); C22C 9/06 (2006.01); C22C 9/00 (2006.01); B23K 35/30 (2006.01); B32B 15/20 (2006.01);
U.S. Cl.
CPC ...
H01L 24/45 (2013.01); B23K 35/302 (2013.01); B32B 15/018 (2013.01); B32B 15/20 (2013.01); C22C 9/00 (2013.01); C22C 9/06 (2013.01); H01L 24/43 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/4321 (2013.01); H01L 2224/43825 (2013.01); H01L 2224/43827 (2013.01); H01L 2224/43848 (2013.01); H01L 2224/45 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/45155 (2013.01); H01L 2224/45541 (2013.01); H01L 2224/45565 (2013.01); H01L 2224/45572 (2013.01); H01L 2224/45644 (2013.01); H01L 2224/45664 (2013.01); H01L 2924/00011 (2013.01); H01L 2924/0102 (2013.01); H01L 2924/013 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01015 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01046 (2013.01); H01L 2924/01049 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/10253 (2013.01);
Abstract
There is provided a bonding wire that improves bonding reliability of a ball bonded part and ball formability and is suitable for on-vehicle devices. The bonding wire for a semiconductor includes a Cu alloy core material, and a Pd coating layer formed on a surface of the Cu alloy core material, and is characterized in that the Cu alloy core material contains Ni, a concentration of Ni is 0.1 to 1.2 wt. % relative to the entire wire, and a thickness of the Pd coating layer is 0.015 to 0.150 μm.