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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10950432 B1

PDFFull Text
Date of Patent:
Mar. 16, 2021

Filed:

Jun. 09, 2020

Method of depositing thin film and method of manufacturing semiconductor device

Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Young Hoon Kim, Chungcheongnam-do, KR;

Yong Gyu Han, Seoul, KR;

Dae Youn Kim, Daejeon, KR;

Tae Hee Yoo, Gyeonggi-do, KR;

Wan Gyu Lim, Gyeonggi-do, KR;

Jin Geun Yu, Chungcheongnam-do, KR;

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:

Snell & Wilmer L.L.P.

Primary Examiner:

Brook Kebede

Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01L 21/033 (2006.01); C23C 16/50 (2006.01); C23C 16/455 (2006.01); C23C 16/34 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); C23C 16/345 (2013.01); C23C 16/45525 (2013.01); C23C 16/45542 (2013.01); C23C 16/50 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02211 (2013.01); H01L 21/02219 (2013.01); H01L 21/02274 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/0338 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 21/02208 (2013.01);
Abstract

Provided is a method of depositing a thin film on a pattern structure of a semiconductor substrate, the method including (a) supplying a source gas; (b) supplying a reactive gas; and (c) supplying plasma, wherein the steps (a), (b), and (c) are sequentially repeated on the semiconductor substrate within a reaction space until a desired thickness is obtained, and a frequency of the plasma is a high frequency of 60 MHz or greater.

Find Patent Forward Citations

Kim, Young. (2021). Method of depositing thin film and method of manufacturing semiconductor device (U.S. Patent No. 10950432). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10950432

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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