The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 09, 2021

Filed:

Jun. 06, 2017
Applicant:

Soitec, Bernin, FR;

Inventors:

Eric Desbonnets, Lumbin, FR;

Ionut Radu, Crolles, FR;

Oleg Kononchuk, Theys, FR;

Jean-Pierre Raskin, Belgique, FR;

Assignee:

Soitec, Bernin, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 21/02 (2006.01); H01L 29/786 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76283 (2013.01); H01L 21/02002 (2013.01); H01L 21/76224 (2013.01); H01L 21/84 (2013.01); H01L 27/1203 (2013.01); H01L 27/1218 (2013.01); H01L 29/0649 (2013.01); H01L 29/78603 (2013.01); H01L 21/76264 (2013.01);
Abstract

A substrate for microelectronic radiofrequency devices includes a carrier substrate made of a first semiconductor material having a resistivity higher than 500 ohms-cm; a plurality of trenches in the carrier substrate, which trenches are filled with a second material, and defining on a first side of the carrier substrate a plurality of first zones made of a first material and at least one second zone made of a second material. The second material has a resistivity higher than 10 kohms-cm, and the first zones have a maximum dimension smaller than 10 microns and are insulated from one another by the second zone.


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