The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2021
Filed:
Aug. 21, 2019
Applicant:
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Inventors:
Ryan W. Sporer, Mechanicville, NY (US);
Jiehui Shu, Clifton Park, NY (US);
Assignee:
GLOBALFOUNDRIES U.S. INC., Santa Clara, CA (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 29/06 (2006.01); H01L 21/768 (2006.01); H01L 21/74 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76264 (2013.01); H01L 21/743 (2013.01); H01L 21/76831 (2013.01); H01L 29/0649 (2013.01);
Abstract
A method forms a trench isolation opening extending into an SOI substrate, and forms an etch stop member in a portion of the insulator layer abutting a side of the trench isolation opening. The etch stop member has a higher etch selectivity than the insulator layer of the SOI substrate. A trench isolation is formed in the trench isolation opening. A contact is formed to a portion of the semiconductor layer of the SOI substrate. The etch stop member is structured to prevent contact punch through to the base substrate of the SOI substrate.