The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 09, 2021

Filed:

Jan. 30, 2019
Applicant:

Hitachi High-tech Corporation, Tokyo, JP;

Inventors:

Takeyoshi Ohashi, Tokyo, JP;

Masami Ikota, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/22 (2006.01); H01J 37/28 (2006.01); G06T 7/00 (2017.01);
U.S. Cl.
CPC ...
H01J 37/222 (2013.01); G06T 7/0004 (2013.01); H01J 37/28 (2013.01); G06T 2207/10061 (2013.01); G06T 2207/30148 (2013.01); H01J 2237/24564 (2013.01); H01J 2237/2801 (2013.01);
Abstract

An inspection system is provided that includes a microscope that scans a sample with a beam that is an incident electron beam, and an image processing device that controls the microscope. The image processing device performs: an acquisition process of acquiring a plurality of images relating to brightness based on an amount of a signal electron detected from the sample a result of controlling the microscope according to a s and irradiating the sample with the beam, the plurality of image acquisition condition being multiple combinations of different irradiation amounts of the beam per unit length; a first generation process of generating a plurality of actually measured profiles that show a relationship between an irradiation position of the beam in the sample and the brightness of the sample, based on the plurality of images acquired in the acquisition process; and an output process of outputting an electrical contact characteristic of the sample based on the plurality of actually measured profiles generated in the first generation process.


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